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IXTA140P05T - Power MOSFET

Features

  • International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = - 250μA VDS = VGS, ID = - 250μA VGS = ± 15V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. - 50 - 2.0 - 4.0 V V z z z Easy to Mount Space Savings High Power Density ±100 nA -10 μA - 750 μ A 9 mΩ.

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TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA140P05T IXTP140P05T IXTH140P05T VDSS ID25 RDS(on) = = ≤ - 50V - 140A 9mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings - 50 - 50 ±15 ±25 -140 -120 - 420 - 70 1 298 -55 ... +150 150 -55 ... +150 300 260 1.13/10 2.5 3.0 6.0 V V V V A A A A J W °C °C °C °C °C Nm/lb.in.
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