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IXTA5N60P - PolarHV Power MOSFET

Download the IXTA5N60P datasheet PDF. This datasheet also covers the IXTP5N60P variant, as both devices belong to the same polarhv power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Characteristic Values Min. Typ. Max. z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect 600 V V GS(th) V DS = V, GS I D = 50μA Advantages 3.0 5.5 V IGSS VGS = ±30 V, VDS = 0 V ±100 nA z Easy to mount z Space savings I DSS V =V DS DSS VGS = 0 V TJ = 125°C 5 μA z High power density 50 μA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.7 Ω © 2006 IXYS All rig.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTP5N60P_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXTA50N20P Power MOSFET IXYS Corporation
IXTA50N20P N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTA50N25T Trench Gate Power MOSFET
IXTA56N15T Power MOSFETs
IXTA02N250 High Voltage Power MOSFET
IXTA02N250HV High Voltage Power MOSFET
IXTA02N450HV High Voltage Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 5N60P IXTP 5N60P VDSS = 600 V ID25 = 5A RDS(on) ≤ 1.7 Ω Symbol V DSS E VDGR VGSS VGSM T ID25 IDM IAR EAR E EAS dv/dt L PD TJ TJM O Tstg T L TSOLD Md S Weight Test Conditions T J = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C 1.6 mm (0.062 in.