IXTA64N10L2 - Power MOSFET

Datasheet Summary

Features

Designed for Linear Operation.
International Standard Packages.
Avalanche Rated.
Guaranteed FBSOA at 75C Advantages.
Easy to Mount.
Space Savings.
High Power Density.

IXYS

📥 Download Datasheet

Datasheet Details

Part number	IXTA64N10L2
Manufacturer	IXYS
File Size	345.42 KB
Description	Power MOSFET
Datasheet	IXTA64N10L2 Datasheet
Additional preview pages of the IXTA64N10L2 datasheet.

📁 Similar Datasheet

IXTA64N10L2 - N-Channel MOSFET (INCHANGE)
IXTA60N10T - N-Channel MOSFET (INCHANGE)
IXTA60N20T - N-Channel MOSFET (INCHANGE)
IXTA62N15P - PolarHT Power MOSFET (IXYS Corporation)
IXTA62N15P - N-Channel MOSFET (INCHANGE)
IXTA6N50D2 - N-Channel MOSFET (IXYS Corporation)
IXTA6N50P - N-Channel MOSFET (INCHANGE)
IXTA05N100 - Power MOSFET (IXYS Corporation)
IXTA05N100 - N-Channel MOSFET (INCHANGE)
IXTA08N100P - N-Channel MOSFET (INCHANGE)

Other Datasheets by IXYS

IXTA60N10T - Power MOSFET
IXTA60N20T - Power MOSFET
IXTA6N100D2 - N-Channel MOSFET
IXTA6N100D2HV - Power MOSFET
IXTA6N50P - Power MOSFET
IXTA02N250 - High Voltage Power MOSFET
IXTA02N250HV - High Voltage Power MOSFET
IXTA02N450HV - High Voltage Power MOSFETs

Full PDF Text Transcription

Click to expand full text

Preliminary Technical Information LinearL2TM Power MOSFET w/Extended FBSOA IXTA64N10L2 IXTP64N10L2 IXTH64N10L2 VDSS = 100V ID25 = 64A  RDS(on) 32m N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V 20 V 30 V TC = 25C 64 A TC = 25C, Pulse Width Limited by TJM 140 A TC = 25C TC = 25C 32 A 2 J TC = 25C 357 W -55 to +150 C +150 C -55 to +150 C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-247) 1.13 / 10 N/lb Nm/lb.

Published: Nov 5, 2020 |