IXTA64N10L2 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTA64N10L2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 32mΩ@VGS=10V ·Fully characterized avalanche volt

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Preliminary Technical Information LinearL2TM Power MOSFET w/Extended FBSOA IXTA64N10L2 IXTP64N10L2 IXTH64N10L2 VDSS = 100V ID25 = 64A  RDS(on) 32m

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