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IXTH10P60 - Power MOSFET

Download the IXTH10P60 datasheet PDF. This datasheet also covers the IXTT10P60 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International Standard Packages z Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTT10P60-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTH10P50 P-Channel MOSFET IXYS Corporation
IXTH102N15T N-Channel MOSFET INCHANGE
IXTH102N20T N-Channel MOSFET INCHANGE
IXTH10N100 MOSFET IXYS Corporation
IXTH110N10L2 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTH10P50P Power MOSFET
IXTH102N15T Power MOSFET
IXTH102N20T Power MOSFET
IXTH10N100D2 Depletion Mode MOSFET
IXTH110N10L2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTT10P60 IXTH10P60 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings - 600 V - 600 V ±20 V ±30 V - 10 A - 40 A - 10 A 3 J 300 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 4 g 6 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = 0.