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LinearTM Power MOSFET w/ Extended FBSOA
N-Channel Enhancement Mode Avalanche Rated
IXTH12N100L
VDSS = ID25 = ≤ RDS(on)
1000V 12A 1.3Ω
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.063 in.) from Case for 10s Plastic Body for 10s Mounting Torque
Maximum Ratings
1000
V
1000
V
±30
V
±40
V
12
A
25
A
12
A
1.5
J
400
W
-55...+150
°C
150
°C
-55...+150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
IXTH12N100L Datasheet
