IXYS IXTH12N100L
Power MOSFET
| Part No. | IXTH12N100L |
|---|---|
| Datasheet | IXTH12N100L Download |
| Manufacturer |  IXYS |
| Description | Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
1000 V 1000 V ±30 V ±40 V 12 A 25 A 12 A 1.5 J 400 W -55...+150 °C 150 °C -55...+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 20V, ID = 0.5● IDSS, Note 1 Characteristic Values Min. Typ. Max. 1000 V 3.5 5.5 V ±100 nA 50 μA 500 μA 1.3 Ω TO-247 G DS Tab G = Gate S = Source D = Drain Tab = Drain
FEATURES
● International Standard Package● Designed for Linear Operation
● Avalanche Rated
● Molding Epoxy Meets UL94 V-0 Flammability Classification Advantages
● Easy to Mount
● Space Savings
● High Power Density
APPLICATIONS
● Programmable Loads● Current Regulators
● DC-DC Converters
● Battery Chargers
● DC Choppers
● Temperature and Lighting Controls © 2010 IXYS CORPORATION, All Rights Reserved DS99126B(04/10) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 20V...
