Overview: LinearTM Power MOSFET w/ Extended FBSOA
N-Channel Enhancement Mode Avalanche Rated IXTH12N100L VDSS = ID25 = ≤ RDS(on) 1000V 12A 1.3Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.063 in.) from Case for 10s Plastic Body for 10s Mounting Torque Maximum Ratings 1000 V 1000 V ±30 V ±40 V 12 A 25 A 12 A 1.5 J 400 W -55...+150 °C 150 °C -55...+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 20V, ID = 0.5 • IDSS, Note 1 Characteristic Values Min. Typ. Max. 1000 V 3.5 5.5 V ±100 nA 50 μA 500 μA 1.
