z z z z z
G
D
S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6mm (0.062in. ) from case for 10s Plastic body for 10 seconds Mounting torque
300 260 1.13 / 10 6
International standard package 175°C Operating Temperature High current handling capability Avalanche rated Low RDS(on)
Advantages
z z z
Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS.
Full PDF Text Transcription for IXTH260N055T2 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTH260N055T2. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH260N055T2 VDSS ID25 RDS(on) = 55V = 260A ≤ 3.3mΩ TO-247 Symbol VD...
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IXTH260N055T2 VDSS ID25 RDS(on) = 55V = 260A ≤ 3.3mΩ TO-247 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 55 55 ± 20 260 160 780 100 600 480 -55 ... +175 175 -55 ... +175 V V V A A A A mJ W °C °C °C °C °C Nm/lb.in. g Features z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque 300 260 1.