IXTH260N055T2
IXTH260N055T2 is Power MOSFET manufactured by IXYS.
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS ID25
RDS(on)
= 55V = 260A ≤ 3.3mΩ
TO-247
Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 55 55 ± 20 260 160 780 100 600 480 -55 ... +175 175 -55 ... +175 V V V A A A A mJ W °C °C °C °C °C Nm/lb.in. g Features z z z z z
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds...
