Datasheet Summary
Advance Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTH440N055T2 IXTT440N055T2
VDSS ID25
RDS(on)
= 55V = 440A ≤ 1.8mΩ
TO-247 (IXTH)
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 55 55 ± 20 ± 30 440 160 1200 200 1.5 1000 -55 ... +175 175 -55 ... +175 W °C °C °C °C °C Nm/lb.in. g g A A J V V V A A V
D (Tab)
TO-268 (IXTT) G S
D (Tab)
G = Gate S =...