IXYS IXTK120N25
Power MOSFET
| Part No. | IXTK120N25 |
|---|---|
| Datasheet | IXTK120N25 Download |
| Manufacturer |  IXYS |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
●Low RDS (on) HDMOSTM process●Rugged polysilicon gate cell structure
●International standard package
●Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 V DC, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C RDS(on) VPuGSlse=te1s0t,Vt,≤ID3=000.m5 sID,2d5 uty cycle d ≤ 2% Characteristic Values Min. Typ. Max. 250 V 2.0 4.0 V ±200 nA 50 µA 3 mA 20 mΩ
APPLICATIONS
● Motorcontrols● DC choppers
● Switched-mode power supplies Advantages
● Easy to mount with one screw (isolated mounting screw hole)
● Space savings
● High power density © 2003 IXYS All rights reserved DS98879D(11/03) IXTK 120N25 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs VDS = 10 V; ID = 0.5 ID25, pulse test Characteristic values Min. Typ. Max. 65 98 S Ciss 7700 pF Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1700 pF Crss 600 pF td(on) 35 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 38 ns td...
