IXYS IXTK120N25P
PolarHT Power MOSFET
MAXIMUM RATINGS
250 V 250 V ± 20 V ± 30 V 120 A 75 A 300 A 60 A 2.5 J 10 700 -55 ... +150 150 -55 ... +150 300 260 V/ns W °C °C °C °C °C 1.13/10 10 Nm/lb.in. g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 500μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0 V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5● ID25, Note 1 Characteristic Values Min. Typ. Max. 250 V 2.5 5.0 V ± 200 nA 25 μA 250 μA 19 24 mΩ VDSS = ID25 = RDS(on) ≤ 250V 120A 24mΩ TO-264 G D S G = Gate S = Source (TAB) D = Drain TAB = Drain
FEATURES
z International Standard Package z Fast Intrinsic Diode z Avalanche Rated z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power DensityAPPLICATIONS
z Switched-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and DC Motor Drives z Robotics and Servo Controls © 2009 IXYS CORPORATION, All Rights Reserved DS99175F(5/09) Symbol Test Conditions (TJ = 25°C Unless Othe...