Overview: Advance Technical Information Trench Gate Power MOSFET
N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS =
ID25 = =RDS(on) 85 V 160 A 6.0 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS V
DGR
VGSM ID25 IDRMS IDM IAR
E AS
dv/dt
PD TJ TJM Tstg TL
M d
Weight TJ = 25°C to 175°C T J = 25°C to 175°C; R GS = 1 MΩ TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM
TC = 25°C T C = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T J ≤ 150°C, R G = 10 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s
Mounting torque (TO-3P / TO-220)
TO-3P TO-220 TO-263 85 V 85 V
±20 V
160 A 75 A
350 A 75 A
1.0 J
3 V/ns 360
-55 ... +175 175
-55 ... +150
300 260 W
°C °C °C
°C °C 1.13/10 Nm/lb.in.
5.5 g 4g 3g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max.
85 V V GS(th) V = V , I = 1 mA DS GS D 2.0 4.0 V IGSS VGS = ±20 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V TJ = 125°C 25 µA 250 µA RDS(on) VGS = 10 V, ID = 50 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 5.0 6.
