Advance Technical Information Trench Gate Power M.
IXYS
IXTP160N085T - Power MOSFET
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) .
INCHANGE
IXTP160N085T - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTP160N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche vo.