Datasheet4U Logo Datasheet4U.com

IXTP5N60P - PolarHV Power MOSFET

Key Features

  • Characteristic Values Min. Typ. Max. z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect 600 V V GS(th) V DS = V, GS I D = 50μA Advantages 3.0 5.5 V IGSS VGS = ±30 V, VDS = 0 V ±100 nA z Easy to mount z Space savings I DSS V =V DS DSS VGS = 0 V TJ = 125°C 5 μA z High power density 50 μA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.7 Ω © 2006 IXYS All rig.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP5N60P N-Channel MOSFET INCHANGE
IXTP5N50P Power MOSFET IXYS Corporation
IXTP5N50P N-Channel MOSFET INCHANGE
IXTP50N085T N-Channel MOSFET INCHANGE
IXTP50N085T Power MOSFET IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTP50N20PM Power MOSFET
IXTP50N25T Trench Gate Power MOSFET
IXTP56N15T Power MOSFETs
IXTP02N120P Power MOSFET
IXTP05N100M N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 5N60P IXTP 5N60P VDSS = 600 V ID25 = 5A RDS(on) ≤ 1.7 Ω Symbol V DSS E VDGR VGSS VGSM T ID25 IDM IAR EAR E EAS dv/dt L PD TJ TJM O Tstg T L TSOLD Md S Weight Test Conditions T J = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C 1.6 mm (0.062 in.