IXTP5N60P Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTP5N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 1.7Ω@VGS=10V ·Fully characterized avalanche voltag

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PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 5N60P IXTP 5N60P VDSS = 600 V ID25 = 5A RDS(on) ≤ 1.7 Ω Symbol V DSS E V

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