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IXTP60N20X4 - Power MOSFET

Key Features

  • International Standard Package.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Other Datasheets by IXYS (now Littelfuse)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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X4-Class Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP60N20X4 D G S Symbol V DSS V DGR VGS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions T J = 25C to 175C T J = 25C to 175C, R GS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C I S  I, DM V DD  V, DSS T J  150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque Maximum Ratings 200 V 200 V 20 V 30 V 60 A 106 A 30 A 350 mJ 50 V/ns 250 W -55 ... +175 C 175 C -55 ... +175 C 300 °C 1.13 / 10 3 Nm/lb.