IXTP60N20T Overview
Key Features
- Static drain-source on-resistance: RDS(on) ≤ 40mΩ@VGS=10V
- Fully characterized avalanche voltage and current
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IXTP60N20T |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 246.72 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IXTP60N20T | IXYS | Power MOSFET |
| IXTP60N20X4 | IXYS | Power MOSFET |