| Part Number | IXTP60N20T Datasheet |
|---|---|
| Manufacturer | IXYS |
| Overview | TrenchTM Power MOSFET IXTA60N20T IXTP60N20T IXTQ60N20T VDSS ID25 RDS(on) = 200V = 60A ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (I. z z z z z High Current Handling Capability 175°C Operating Temperature Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS . |
IXTP60N20T Datasheet and Specifications PDF
The IXTP60N20T is a Power MOSFET.
| Part Number | IXTP60N20T Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IXTP60N20T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 40mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot.
*Static drain-source on-resistance: RDS(on) ≤ 40mΩ@VGS=10V *Fully characterized avalanche voltage and current *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATION *DC/DC Converters *High Speed Power Switching Applications *ABSOLUTE. |