Click to expand full text
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTP64N055T IXTY64N055T
VDSS ID25
= =
RDS(on) ≤
55 V 64 A 13 mΩ
TO-220 (IXTP)
G
D (TAB) D S
Symbol V DSS VDGR VGSM ID25 IL IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Package Current Limit, RMS TO-252 TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 18 Ω TC = 25°C
Maximum Ratings 55 55 ± 20 64 25 170 10 250 3 130 -55 ... +175 175 -55 ...
IXTP64N055T Datasheet
