Full PDF Text Transcription for IXTP64N055T (Reference)
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isc N-Channel MOSFET Transistor IXTP64N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% ...
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13mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 64 IDM Drain Current-Single Pulsed 170 PD Total Dissipation @TC=25℃ 130 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resista
IXTP64N055T Datasheet
