IXTP64N055T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTP64N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13mΩ@VGS=10V ·Fully characterized avalanche volt

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Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP64N055T IXTY64N055T VDSS ID25 = = RDS(on

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