• Part: IXTP8N65X2
  • Description: Power MOSFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 241.42 KB
IXTP8N65X2 Datasheet (PDF) Download
IXYS
IXTP8N65X2

Key Features

  • International Standard Packages
  • Low RDS(ON) and QG
  • Avalanche Rated
  • Low Package Inductance Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5
  • ID25, Note 1 Characteristic Values Min. Typ. Max. 650 V
  • 0 5.0 V 100 nA 10 A 150 A 500 m Advantages
  • High Power Density
  • Easy to Mount
  • Space Savings