Datasheet4U Logo Datasheet4U.com

IXTP8N65X2M - Power MOSFET

Datasheet Summary

Features

  • International Standard Package.
  • Plastic Overmolded Tab.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Datasheet preview – IXTP8N65X2M

Datasheet Details

Part number IXTP8N65X2M
Manufacturer IXYS
File Size 117.66 KB
Description Power MOSFET
Datasheet download datasheet IXTP8N65X2M Datasheet
Additional preview pages of the IXTP8N65X2M datasheet.
Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text
Advance Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N65X2M VDSS = ID25 = RDS(on) 650V 4A 550m N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 650 650 V V 30 V 40 V 4A 16 A 4A 250 mJ 50 V/ns 32 W -55 ... +150 150 -55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in 2.
Published: |