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IXTQ130N15T - Power MOSFET

Download the IXTQ130N15T datasheet PDF. This datasheet also covers the IXTH130N15T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA Characteristic Values Min. Typ. Max. 150 V VGS(th) VDS = VGS, ID = 1 mA 2.5 4.5 V IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA I DSS V =V DS DSS VGS = 0 V TJ = 150°C 5 μA 250 μA RDS(on) VGS = 10 V, ID = 0.5 ID25, Notes 1, 2 10 12 mΩ Advantages z Easy to moun.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH130N15T-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N15T IXTQ130N15T V= DSS ID25 = RDS(on) ≤ 150 130 12 V A mΩ TO-247 (IXTH) Symbol VDSS V DGR V GSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C; R GS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 2.5 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 Maximum Ratings 150 V 150 V ± 30 V 130 A 75 A 330 A 5 A 1.2 J 3 V/ns G D S TO-3P (IXTQ) G D S (TAB) (TAB) 750 -55 ... +175 175 -55 ...