Preliminary Technical Information TrenchHVTM Powe.
IXYS
IXTQ130N15T - Power MOSFET
Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N15T IXTQ130N15T V= DSS ID25 = RDS(on) .
INCHANGE
IXTQ130N15T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) ·Fast Swi.
