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Advance Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
IXTQ 160N085T IXTA 160N085T IXTP 160N085T
VDSS =
ID25 = =RDS(on)
85 V 160 A 6.0 mΩ
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS V
DGR
VGSM ID25 IDRMS IDM IAR
E AS
dv/dt
PD TJ TJM Tstg TL
M d
Weight
TJ = 25°C to 175°C
T J
=
25°C
to
175°C;
R GS
=
1
MΩ
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM
TC = 25°C
T C
= 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
T J
≤
150°C,
R G
=
10
Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s
Mounting torque (TO-3P / TO-220)
TO-3P TO-220 TO-263
85 V 85 V
±20 V
160 A 75 A
350 A 75 A
1.0 J
3 V/ns
360
-55 ... +175 175
-55 ...
IXTQ160N085T Datasheet
