IXTQ160N085T Overview
+150 300 260 W °C °C °C °C °C 1.13/10 Nm/lb.in. 5.5 g 4g 3g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µA Characteristic Values Min.
IXTQ160N085T Key Features
- easy to drive and to protect
- Gate 3
- Source
- Drain 4
