Advance Technical Information Trench Gate Power M.
IXYS
IXTQ160N085T - Power MOSFET
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) .
INCHANGE
IXTQ160N085T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) ·Fast Switc.