Datasheet4U Logo Datasheet4U.com

IXTQ22N50P - PolarHV Power MOSFET

This page provides the datasheet information for the IXTQ22N50P, a member of the IXTV22N50PS PolarHV Power MOSFET family.

Features

  • z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 270 mΩ Advantages z z z Easy to mount Space savings High power density DS99351A(03/05) © 2005 IXYS All rights reserved IXTQ 22N50P IXTV 22N50PS IXTV 22N50P www. DataSheet4U. com TO-3P (IXTQ) Outline Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Ty.

📥 Download Datasheet

Datasheet preview – IXTQ22N50P

Datasheet Details

Part number IXTQ22N50P
Manufacturer IXYS
File Size 227.58 KB
Description PolarHV Power MOSFET
Datasheet download datasheet IXTQ22N50P Datasheet
Additional preview pages of the IXTQ22N50P datasheet.
Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text
Advance Technical Information www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTQ 22N50P IXTV 22N50P IXTV 22N50PS VDSS ID25 RDS(on) = 500 V = 22 A = 270 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Mounting torque TO-3P PLUS220 & PLUS220SMD TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C 350 -55 ... +150 150 -55 ...
Published: |