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IXTQ22N50P - PolarHV Power MOSFET

Download the IXTQ22N50P datasheet PDF. This datasheet also covers the IXTV22N50PS variant, as both devices belong to the same polarhv power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 270 mΩ Advantages z z z Easy to mount Space savings High power density DS99351A(03/05) © 2005 IXYS All rights reserved IXTQ 22N50P IXTV 22N50PS IXTV 22N50P www. DataSheet4U. com TO-3P (IXTQ) Outline Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Ty.

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Note: The manufacturer provides a single datasheet file (IXTV22N50PS_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTQ22N50P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTQ22N50P. For precise diagrams, and layout, please refer to the original PDF.

Advance Technical Information www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTQ 22N50P IXTV 22N50P IXTV 22N50PS VDSS ID25 RDS(on) = 500 V = 22 A ...

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IXTQ 22N50P IXTV 22N50P IXTV 22N50PS VDSS ID25 RDS(on) = 500 V = 22 A = 270 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Mounting torque TO-3P PLUS220 & PLUS220SMD TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C 350 -55 ... +150 150 -55 ...

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