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PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS
VDSS = 600 V ID25 = 26 A RDS(on) ≤ 270 mΩ
TO-247 (IXTH)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS
dv/dt
PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P&TO-247) Mounting force (PLUS220) TO-3P TO-247 TO-268 PLUS220 & PLUS220SMD
Maximum Ratings
600
V
600
V
±30
V
±40
V
26
A
65
A
13
A
40
mJ
1.2
J
10
V/ns
460
W
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IXTQ26N60P Datasheet
