IXTQ26N60P Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 270mΩ(Max) ·Fast Sw

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PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS VDSS = 600 V ID25 = 26 A R

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