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High Current Power MOSFET
N-Channel Enhancement Mode Preliminary Data Sheet
IXTH 75N15 IXTQ 75N15 IXTT 75N15
VDSS ID25
RDS(on)
= 150 V = 75 A = 23 mΩ
TO-247 AD (IXTH)
Symbol
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL Md Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD, TO-3P TO-268
Maximum Ratings
150 V 150 V ±20 V ±30 V
75 A
300 A 75 A 60 mJ 1.5 J
5 V/ns
330
-55 ... +150 150
-55 ... +150
W
°C °C °C
300 °C
1.13/10 Nm/lb.in.
IXTQ75N15 Datasheet
