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IXTQ86N25T - Power MOSFET

Download the IXTQ86N25T datasheet PDF. This datasheet also covers the IXTH86N25T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • (TAB) D = Drain TAB = Drain z International standard packages z Avalanche rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density.

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Note: The manufacturer provides a single datasheet file (IXTH86N25T-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTQ86N25T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTQ86N25T. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH86N25T IXTQ86N25T IXTV86N25T VDSS = ID25 = RDS(on) ≤ 250V 86A 37...

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d IXTH86N25T IXTQ86N25T IXTV86N25T VDSS = ID25 = RDS(on) ≤ 250V 86A 37mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 I LRMS IDM IAS EAS PD TJ TJM Tstg TL TSOLD Md F C Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247 & TO-3P) Mounting force (PLUS220) TO-247 TO-3P PLUS220 Maximum Ratings 250 V 250 V ± 30 V 86 A 75 A 190 A 10 A 1.5 J 540 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in

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Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTQ86N25T N-Channel MOSFET INCHANGE

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