Preliminary Technical Information Trench Gate Pow.
IXYS
IXTQ86N25T - Power MOSFET
Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH86N25T IXTQ86N25T IXTV86N25T VDSS = ID25 .
INCHANGE
IXTQ86N25T - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 37mΩ(Max) ·Fast Swi.