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IXTT1N300P3HV - High Voltage Power MOSFET

Key Features

  • High Blocking Voltage.
  • High Voltage Packages Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage Power MOSFET Preliminary Technical Information IXTT1N300P3HV IXTH1N300P3HV VDSS I D25 RDS(on) = 3000V = 1.00A  50 N-Channel Enhancement Mode TO-268HV (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 ID110 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 110C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268HV TO-247HV Maximum Ratings 3000 V 3000 V 20 V 30 V 1.00 A 0.65 A 2.60 A 195 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13/10 Nm/lb.in 4.0 g 6.