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IXTT10N100D2 Datasheet Depletion Mode MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: Depletion Mode MOSFET N-Channel Preliminary Technical Information IXTH10N100D2 IXTT10N100D2 VDSX = ID(on) >  RDS(on) D 1000V 10A 1.5 G S TO-247 (IXTH) G DS D (Tab) Symbol VDSX VDGX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 1000 V 1000 V 20 V 30 V 695 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 6 g 4 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250A 1000 V VGS(off) VDS = 25V, ID = 1mA - 2.5 - 4.5 V IGSX VGS = 20V, VDS = 0V 100 nA IDSX(off) VDS = VDSX, VGS = - 5V TJ = 125C 10 A 250 A RDS(on) VGS = 0V, ID = 5A, Note 1 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Normally ON Mode.
  •  International Standard Packages.
  • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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IXTT10N100D2 Distributor