Datasheet4U Logo Datasheet4U.com

IXTT12N140 - Power MOSFET

Key Features

  • z International Standard Packages z Molding Epoxies Weet UL 94 V-0 Flammability Classification z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTT100N25P N-Channel MOSFET IXYS Corporation
IXTT10P50 P-Channel MOSFET IXYS Corporation
IXTT110N10P N-Channel MOSFET IXYS Corporation
IXTT11P50 P-Channel MOSFET IXYS Corporation
IXTT140N10P Power MOSFET IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTT12N150 High Voltage Power MOSFET
IXTT12N150HV N-Channel Power MOSFET
IXTT120N15P Power MOSFET
IXTT10N100D2 Depletion Mode MOSFET
IXTT10P60 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTT12N140 IXTH12N140 VDSS = ID25 = RDS(on) ≤ 1400V 12A 2Ω TO-268 (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s Mounting Torque TO-268 TO-247 Maximum Ratings 1400 V 1400 V ±20 V ±30 V 12 A 40 A 6 A 750 mJ 890 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 4.0 g 6.