Datasheet4U Logo Datasheet4U.com

IXTT120N15P - Power MOSFET

Download the IXTT120N15P datasheet PDF. This datasheet also covers the IXTQ120N15P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2005 IXYS All rights reserved DS99280E(10/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd R thJC RthCS IXTQ 120N15P IXTT 120N15P Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. V = 10 V; I = 0.5 I , pulse test 40 60 S DS D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTQ120N15P_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTT100N25P N-Channel MOSFET IXYS Corporation
IXTT10P50 P-Channel MOSFET IXYS Corporation
IXTT110N10P N-Channel MOSFET IXYS Corporation
IXTT11P50 P-Channel MOSFET IXYS Corporation
IXTT140N10P Power MOSFET IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTT12N140 Power MOSFET
IXTT12N150 High Voltage Power MOSFET
IXTT12N150HV N-Channel Power MOSFET
IXTT10N100D2 Depletion Mode MOSFET
IXTT10P60 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarHTTM Power MOSFET IXTQ 120N15P IXTT 120N15P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 150 V 120 A 16 mΩ Symbol VDSS V DGR VDSS VGSM ID25 ID(RMS) I DM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C T J = 25° C to 175° C; R GS = 1 MΩ Continuous Transient TC = 25° C External lead current limit T C = 25° C, pulse width limited by T JM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P TO-268 Maximum Ratings 150 V 150 V ±20 V ±30 V 120 A 75 A 260 A 60 A 60 mJ 2.0 J 10 V/ns 600 W -55 ... +175 °C 175 °C -55 ...