IXTT12N150HV Datasheet | IXYS

High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode VDSS = ID25 = RDS(on) 1500V 12A 2.2 TO-268HV Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Maximum Ratings 30 40 750 mJ - 55 ... +150 150 - 55 ... +150 300 260 V/ns C C C °C °C g G S D (Tab) G = Gate S = Source D = Drain Tab =...