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IXTT12N150HV - N-Channel Power MOSFET

Key Features

  • High Blocking Voltage.
  • High Voltage Package.
  • Fast Intrinsic Diode.
  • Low Package Inductance Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250A IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5.
  • ID25, Note 1 Characteristic Values Min. Typ. Max. 1500 V 2.5 4.5 V .

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode IXTT12N150HV VDSS = ID25 = RDS(on) 1500V 12A 2.2 TO-268HV Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Maximum Ratings 1500 V 1500 V 30 V 40 V 12 A 40 A 6 A 750 mJ 5 890 - 55 ... +150 150 - 55 ...