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IXTT12N150 Datasheet High Voltage Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: High Voltage Power MOSFET IXTT12N150 IXTH12N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s Mounting Torque TO-268 TO-247 Maximum Ratings 1500 V 1500 V 30 V 40 V 12 A 40 A 6 A 750 mJ 5 V/ns 890 W - 55 ... +150 C 150 C - 55 ... +150 C 300 C 260 C 1.13 / 10 Nm/lb.in. 4.0 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250A IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 1500 V 2.5 4.5 V 100 nA 25 A 500 A 2.2  VDSS = ID25 = RDS(on)  1500V 12A 2.

Key Features

  • International Standard Packages.
  • Molding Epoxies Weet UL 94 V-0 Flammability Classification.
  • Fast Intrinsic Diode.
  • Low Package Inductance Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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IXTT12N150 Distributor