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IXTT12N150 - High Voltage Power MOSFET

Key Features

  • International Standard Packages.
  • Molding Epoxies Weet UL 94 V-0 Flammability Classification.
  • Fast Intrinsic Diode.
  • Low Package Inductance Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTT12N150HV N-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage Power MOSFET IXTT12N150 IXTH12N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s Mounting Torque TO-268 TO-247 Maximum Ratings 1500 V 1500 V 30 V 40 V 12 A 40 A 6 A 750 mJ 5 V/ns 890 W - 55 ... +150 C 150 C - 55 ... +150 C 300 C 260 C 1.13 / 10 Nm/lb.in. 4.0 g 6.