IXTT12N150 Datasheet | IXYS

High Voltage Power MOSFET IXTT12N150 IXTH12N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s Mounting Torque TO-268 TO-247 Maximum Ratings 30 40 750 mJ V/ns - 55 ... +150 C C - 55 ... +150 C C C 1.13 / 10 Nm/lb.in. 4.0 g 6.0...