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IXTT30N50L - Power MOSFET

Download the IXTT30N50L datasheet PDF. This datasheet also covers the IXTH30N50L variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Designed for linear operation z International standard packages z Unclamped Inductive Switching (UIS) rated. z Molding epoxies meet UL 94 V-0 flammability classification z Integrated gate resistor for easy paralleling z Guaranteed FBSOA at 75°C.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH30N50L-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTT30N50L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTT30N50L. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Technical Information Power MOSFET with Extended FBSOA N-Channel Enhancement Mode IXTH30N50L IXTQ30N50L IXTT30N50L D O DD Symbol VDSS VDGR VGSS VGSM ID25 IDM ...

View more extracted text
N50L IXTQ30N50L IXTT30N50L D O DD Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.063in) from case for 10s Plastic body for 10s Mounting torque (TO-247, TO-3P) TO-247 TO-3P TO-268 RGi G O ww O S Maximum Ratings 500 V 500 V ±20 V ±30 V 30 A 60 A 30 A 50 mJ 1.5 J 400 W -55 to +150 °C +150 °C -55 to +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6.0 g 5.5 g 5.

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