Download the IXTT30N60P datasheet PDF.
This datasheet also covers the IXTV30N60PS variant, as both devices belong to the same polarhv power mosfet family and are provided as variant models within a single manufacturer datasheet.
Full PDF Text Transcription for IXTT30N60P (Reference)
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IXTT30N60P. For precise diagrams, and layout, please refer to the original PDF.
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS VDSS = 600 V ID25 = 30 A RDS(on) ≤ 240 m Ω ...
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P IXTV 30N60P IXTV 30N60PS VDSS = 600 V ID25 = 30 A RDS(on) ≤ 240 m Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Mounting force (TO-3P, TO-247) (PLUS220) TO-247 TO-3P PLUS220 TO-268 Maximum Ratings 600 V TO-247 (IXTH) 600 V ±30 V ±40 V 30 A G DS 80 A TO-3P (IXTQ)
IXTT30N60P Datasheet
