Datasheet4U Logo Datasheet4U.com

IXTU8N70X2 - Power MOSFET

Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Datasheet preview – IXTU8N70X2

Datasheet Details

Part number IXTU8N70X2
Manufacturer IXYS
File Size 383.73 KB
Description Power MOSFET
Datasheet download datasheet IXTU8N70X2 Datasheet
Additional preview pages of the IXTU8N70X2 datasheet.
Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTU8N70X2 IXTY8N70X2 IXTA8N70X2 IXTP8N70X2 VDSS = ID25 =  RDS(on) 700V 8A 500m TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 700 V 700 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 8 16 4 250 50 150 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 Mounting Torque (TO-220) 1.13 / 10 N/lb Nm/lb.
Published: |