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IXTV26N50P - Power MOSFET

Download the IXTV26N50P datasheet PDF. This datasheet also covers the IXTQ26N50P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99206E(12/05) Symbol gfs Ciss Coss Crss t d(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Test Conditions Characteristic Values (T J = 25° C, unless otherwise specified) Min. Typ. Max. VDS = 20 V; ID = 0.5.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTQ26N50P_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTV26N50P N-Channel MOSFET INCHANGE
IXTV26N60P N-Channel MOSFET INCHANGE
IXTV200N10T Power MOSFET IXYS Corporation
IXTV200N10TS Power MOSFET IXYS Corporation
IXTV22N50P N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTV26N50PS Power MOSFET
IXTV26N60P N-Channel Power MOSFET
IXTV26N60PS N-Channel Power MOSFET
IXTV22N50P Power MOSFET
IXTV22N50PS Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS VDSS = ID25 = ≤ RDS(on) 500 V 26 A 230 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD T J TJM Tstg TL TSOLD Md Weight TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuos Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P TO-268 PLUS220 & PLUS220SMD 500 V G D 500 V S ±30 V TO-268 (IXTT) ±40 V D (TAB) 26 A 78 A G S 26 A 40 mJ PLUS220 (IXTV) 1.