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IXTX102N65X2 - Power MOSFET

Download the IXTX102N65X2 datasheet PDF. This datasheet also covers the IXTK102N65X2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IXTK102N65X2-IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

Preliminary Technical Information X2-Class Power MOSFET IXTK102N65X2 IXTX102N65X2 VDSS = ID25 = RDS(on)  650V 102A 30m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient 650 V 650 V  30 V  40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 102 204 25 3 1040 50 -55 ...

+150 150 -55 ...

+150 A A A J W V/ns C C C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Torque (TO-264P) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.in N/lb TO-264P PLUS247 10 g 6g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min.

Key Features

  • International Standard Packages.
  • Low QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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