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IXTX20N150 - High Voltage Power MOSFETs

Download the IXTX20N150 datasheet PDF. This datasheet also covers the IXTK20N150 variant, as both devices belong to the same high voltage power mosfets family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IXTK20N150-IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

High Voltage Power MOSFETs w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA IXTK20N150 IXTX20N150 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 1500 1500 V V ±30 V ±40 V 20 A 50 A 10 A 2.5 J 5 V/ns 1250 W -55 to +150 150 -55 to +150 °C °C °C 300 °C 260 °C 1.13/10 20..120 /4.5..27 Nm/lb.in.

N/lb.

10 g 6g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min.

Key Features

  • z Avalanche Rated z Fast Intrinsic Diode z Guaranteed FBSOA at 75°C z Low Package Inductance Advantages z Easy to Mount z Space Savings.

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