Overview: Preliminary Technical Information TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated IXTU12N06T IXTY12N06T VDSS = ID25 =
RDS(on) ≤ 60V 12A 85mΩ TO-251 (IXTU) Symbol
VDSS VDGR
VGSM
ID25 IDM ILRMS
IAR EAS
PD
TJ TJM Tstg
TL TSOLD Md
Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM Package Current Limit, RMS TO-252 TC = 25°C TC = 25°C TC = 25°C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Mounting torque TO-251 TO-252 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 25μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 Maximum Ratings 60 V 60 V ±20 V 12 A 30 A 25 A 3 A 20 mJ 33
-55 ... +175 175
-55 ... +175 300 260
1.13/10
0.40 0.35 W
°C °C °C °C °C
Nm/lb.in.
g g Characteristic Values Min. Typ. Max. 60 V 2.0 4.
