Preliminary Technical Information TrenchMVTM Powe.
IXYS
IXTY12N06T - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU12N06T IXTY12N06T VDSS = ID25 = RDS(on) ≤ .
INCHANGE
IXTY12N06T - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 85mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot varia.