IXXH30N65B4 - 650V IGBTs

Features

z Optimized for 5-30kHz Switching z Square RBSOA z Short Circuit Capability z International Standard Package Advantages z High Power Density z Extremely Rugged z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 650 V 4.0 6.5 V 10.

IXYS

Datasheet Details

Part number	IXXH30N65B4
Manufacturer	IXYS
File Size	165.39 KB
Description	650V IGBTs
Datasheet	IXXH30N65B4 Datasheet
Additional preview pages of the IXXH30N65B4 datasheet.

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Full PDF Text Transcription

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Preliminary Technical Information XPTTM 650V IGBT GenX4TM Extreme Light Punch Through IGBT for 5-30kHz Switching IXXH30N65B4 C G E VCES = IC110 = V ≤CE(sat) tfi(typ) = 650V 30A 2.0V 57ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 15Ω Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 82Ω, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 650 V 650 V ±20 V ±30 V 65 A 30 A 146 A ICM = 60 ≤@VCE VCES 10 A μs 230 -55 ... +175 175 -55 ... +175 300 260 1.13/10 6 W °C °C °C °C °C Nm/lb.

Published: Aug 18, 2016 |