IXXH30N65C4D1 Datasheet Extreme Light Punch Through IGBT

Manufacturer: IXYS (now Littelfuse)

IXXH30N65C4D1 extreme light punch through igbt by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXXH30N65C4D1
Manufacturer	IXYS (now Littelfuse)
File Size	225.69 KB
Description	Extreme Light Punch Through IGBT
Datasheet	IXXH30N65C4D1 Datasheet

Overview

Advance Technical Information XPTTM 650V IGBT GenX4TM w/ Diode IXXH30N65C4D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = 650V IC110 = 30A V CE(sat)  2.50V tfi(typ) = 28ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 15 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 650 V 650 V ±20 V ±30 V 62 A 30 A 40 A 136 A ICM = 60 A  @VCE VCES 10 μs 230 -55 ...

+175 175 -55 ...

+175 300 260 1.13/10 6 W °C °C °C °C °C Nm/lb.in.

Key Features

Optimized for 20-60kHz Switching.
Square RBSOA.
Anti-Parallel Diode.
Short Circuit Capability.
International Standard Package Advantages.
High Power Density.
Extremely Rugged.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C Characteri.

More Datasheets from IXYS (now Littelfuse)

Part Number	Description
IXXH30N65B4	650V IGBTs
IXXH30N60B3	Extreme Light Punch Through IGBT
IXXH30N60B3D1	600V IGBT
IXXH30N60C3	600V IGBTs
IXXH30N60C3D1	600V IGBTs
IXXH100N60B3	IGBT
IXXH100N60C3	IGBT
IXXH110N65B4	650V IGBT
IXXH110N65C4	Extreme Light Punch Through IGBT
IXXH140N65B4	IGBT