IXXH30N65C4D1 - Extreme Light Punch Through IGBT

Features

Optimized for 20-60kHz Switching.
Square RBSOA.
Anti-Parallel Diode.
Short Circuit Capability.
International Standard Package Advantages.
High Power Density.
Extremely Rugged.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C Characteri.

IXYS

Datasheet Details

Part number	IXXH30N65C4D1
Manufacturer	IXYS
File Size	225.69 KB
Description	Extreme Light Punch Through IGBT
Datasheet	IXXH30N65C4D1 Datasheet
Additional preview pages of the IXXH30N65C4D1 datasheet.

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Full PDF Text Transcription

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Advance Technical Information XPTTM 650V IGBT GenX4TM w/ Diode IXXH30N65C4D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = 650V IC110 = 30A V CE(sat)  2.50V tfi(typ) = 28ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 15 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.

Published: Feb 11, 2025 |