• Part: IXXH30N65C4D1
  • Description: Extreme Light Punch Through IGBT
  • Manufacturer: IXYS
  • Size: 225.69 KB
Download IXXH30N65C4D1 Datasheet PDF
IXYS
IXXH30N65C4D1
IXXH30N65C4D1 is manufactured by IXYS.
Advance Technical Information XPTTM 650V IGBT GenX4TM w/ Diode Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = 650V IC110 = 30A V CE(sat)  2.50V tfi(typ) = 28ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) tsc (SCSOA) TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 15 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum...