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IXXH50N60C3D1 Datasheet 600V IGBT

Manufacturer: IXYS (now Littelfuse)

Overview

XPTTM 600V IGBT GenX3TM w/ Diode IXXH50N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = 600V I = 50A C110 V  2.30V CE(sat) tfi(typ) = 42ns Symbol VCES V CGR VGES VGEM I C25 IC110 IF110 ICM I A EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM T stg TL M d Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C, R GE = 1M Continuous Transient T = 25°C (Chip Capability) C TC = 110°C TC = 110°C TC = 25°C, 1ms T = 25°C C TC = 25°C V GE = 15V, T VJ = 150°C, R G = 5 Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 22, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque Maximum Ratings 600 V 600 V ±20 V ±30 V 100 A 50 A 30 A 200 A 25 A 200 mJ I = 100 A CM  @ VCES 10 µs 600 W -55 ...

+175 °C 175 °C -55 ...

+175 °C 300 °C 1.13/10 6 Nm/lb.in.

Key Features

  • Optimized for 20-60kHz Switching.
  • Square RBSOA.
  • Anti-Parallel Ultra Fast Diode.
  • Avalanche Capability.
  • Short Circuit Capability.
  • International Standard Package Advantages.
  • High Power Density.
  • 175°C Rated.
  • Extremely Rugged.
  • Low Gate Drive Requirement.