IXXH50N60C3D1 Description
+175 °C 300 °C 1.13/10 6 Nm/lb.in. 600 V 3.0 5.5 V 25 A 3 mA 100 nA 1.95 2.45 2.30 V V TO-247 AD G C E G = Gate E = Emitter Tab C = Collector Tab = Collector.
IXXH50N60C3D1 Key Features
- Optimized for 20-60kHz Switching
- Square RBSOA
- Anti-Parallel Ultra Fast Diode
- Avalanche Capability
- Short Circuit Capability
- International Standard Package
- High Power Density
- 175°C Rated
- Extremely Rugged
- Low Gate Drive Requirement