IXXX110N65B4H1 - Extreme Light Punch Through IGBT

This page provides the datasheet information for the IXXX110N65B4H1, a member of the IXXK110N65B4H1 Extreme Light Punch Through IGBT family.

Features

Optimized for 10-30kHz Switching.
Square RBSOA.
Short Circuit Capability.
Anti-Parallel Sonic Diode.
High Current Handling Capability.
International Standard Packages Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYS (now Littelfuse)

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IXXX110N65B4H1 Extreme Light Punch Through IGBT by IXYS - Datasheet Preview — Datasheet preview – IXXX110N65B4H1

Datasheet Details

Part number	IXXX110N65B4H1
Manufacturer	IXYS (now Littelfuse)
File Size	395.96 KB
Description	Extreme Light Punch Through IGBT
Datasheet	IXXX110N65B4H1 Datasheet
Additional preview pages of the IXXX110N65B4H1 datasheet.

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Full PDF Text Transcription

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XPTTM 650V GenX4TM IXXK110N65B4H1 w/ Sonic Diode IXXX110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = 650V IC110 = 110A V CE(sat)  2.10V tfi(typ) = 43ns TO-264 (IXXK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient Maximum Ratings 650 V 650 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms 250 A 160 A 110 A 78 A 570 A VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load ICM = 220 A  @VCE VCES VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 μs TC = 25°C 880 W -55 ... +175 °C 175 °C -55 ...

Published: Feb 6, 2019 |